Semiconductor Properties

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Property

Ge

Si

GaAs

Diamond

SiC

Group

IV

IV

III-V

IV

IV-IV

Lattice constant [Å]

5.64

5.43

5.63

3.57

3.08

Bandgap, Eg [eV]

0.66

1.12

1.42

5.45

2.99

Recombination type

Indirect

Indirect

Direct

Indirect

Indirect

Electron mobility,

m n [cm2/(V*s)]

3900

1500

8500

1900

400

Hole mobility,

m p [cm2/(V*s)]

1900

600

400

1600

50

Dielectric constant, e

16.0

11.8

13.1

5.5

10.0

Electron saturation velocity,

Vn(sat) [cm/s]

6*106

1*107

1.2*107

1.5*107

2*107

Hole saturation velocity,

Vp(sat) [cm/s]

 

9*106

1*107

1.05*107

1*107

Electron effective mass

 

1.1

0.068

0.57

0.45

Hole effective mass

 

0.8

0.5

1.2

1.0

Property

Ge

Si

GaAs

Diamond

SiC

Thermal conductivity [W/(cm*K)]

0.64

1.41

0.455

20

4

Specific heat [J/(g*K)]

 

0.70

0.35

0.52

0.65

Optical phonon energy [meV]

 

63

35

163

100

Longitudinal phonon velocity [cm/s]

 

9*105

5.2*105

1.8*106

1.3*106

Thermal expansion coefficient

5.5*10-6

2.5*10-6

5.9*10-6

0.8*10-6

2.9*10-6

Debye temperature

 

645

344

1860

1200

Intrinsic resistivity [W *cm]

43

105

108

>1015

>1015

Breakdown field [V/cm]

~105

3*105

3.5*105

1-20*106

1-5*106

Conduction band density of states [cm-3]

 

2.8*1019

4.7*1017

1*1019

7*1018

Valence band density of states [cm-3]

 

1.04*1019

7*1018

3*1019

2.5*1019

Property

Ge

Si

GaAs

Diamond

SiC

Carrier lifetime, t [ns]

2*105

104 (2.5*106)

~10

0.2

 

Hardness [Kg/mm2]

780

103

600

104

 

Melting point [° C]

941

1420

1238

3800